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EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

MANGANESE-COMPENSATED SILICON

American Journal Of Applied Science And Technology · 04 · 825-830 · 2024

Аннотация

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature. KEYWORDS Semiconductors, strain gauge, deep levels, strain gauge effect, strain potential, compensated silicon, manganese concentration, temperature, semiconductors.

Доказательный фрагмент

«In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures.»

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Демо-превью

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

doi.org/10.37547/ajast/Volume04Issue11-03
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Ключевые слова
Semiconductors, strain gauge, deep levels, strain gauge effect, strain potential, compensated silicon, manganese
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