ФОТОЭЛЕКТРИЧЕСКИЕ ЯВЛЕНИЯ В ОДНОБАЗОВЫХ АРСЕНИДГАЛЛИЕВЫХ СТРУКТУРАХ С ПРЯМО И ОБРАТНО ВКЛЮЧЕННЫМИ БАРЬЕРАМИ

Аннотация

Subjects of research: pGaAs-nGaAs-Ag structure and nGaAs-pGaAs-Ag- structur Purpose of work: research of physical features of widening of space charge’s past and creation of gradient field with field operation of optical parameters of the base tno-barricr gallium arsenium structure with homojunction. Methods of research: current-voltage characteristics, volt-capacity characteristics and spectral characteristics. Comparison of received data with calculated ones. The results obtained and their novelty: For the fest time physical-technological criteria providing photo galvanic conditions and photodiode ones at manufacture of two-junction gallium arsenium n-p-m-structurc by liquid epitaxy on the basis of creation of diffusion field and direct penetration of light radiation to p-n-junction’s border arc realized; it has been shown that mechanisms of current transport in two-junction n-p-m-structurc arc determined by thermo electron emission through metal-semiconductor junction with simultaneous generation processes in space charge past of p-n-junction depending on switching conditions; for the first time it has been experimentally shown interrelation of photocurrent’s internal amplification with phototransistor effect taking past at the change of work voltage’s polarity; it has been experimentally carried out abnormal phenomenon of spectral photosensitivity caused by electrical fields, resulting in narrowing width of base’s forbidden zone in conditions of p-m-junction’s blocking. Practical value: The offered design of reverse switched two-junction nGaAs-pGaAs-Ag-structurc can be used for reception and amplification of optical signals as well as the modulator of light in optical-electron devices of different types. Degree of embed and economic effectivity: the basic scientific results and methods submitted in the dissertation arc the basis for manufacture of devices for reception and communication of optical signal in scientific production associations of Academy of science of the Republic Uzbekistan and for other device-making organizations. Field of application: Optical-electronical and telecommunication systems.