Процессы дефектообразования в кремнии, легированном Ho, La, Eu и их взаимодействие с технологическими примесями О и С

Аннотация

Subject of research: Si, doped with Ho, La, Eu by diffusion method and during crystal grows, Si <Ho>, doped with Ti and Ni. Purpose of work: studying of properties Methods of research: deep levels transient spectroscopy, photocapacity and infrared spectroscopy. The results obtained and their novelty: For the first time it is carried out complex research of properties Si with impurity holmium, europium and lanthanum is carried out and it is revealed that introduction of these doping by high temperature diffusions leads to the existing changes of clcctrophysic properties of silicon. Efficiency of formation of levels Ho, La and Eu in silicon depends on technology factors have been investigated. For the first time energetic specter DL was determined with the help of spectroscopy capacity, created by atoms Ho, La and Eu in silicon at their diffusion introduction. It is revealed that diffusion introduction in these impurity leads to decrease of efficiency formation of thermal and radiating defects and stabilization of parameters silicon. It is established that doped impurity REE during crystal grows, DL in noticeable evaporation is not observed, but the subsequent high temperature in an interval temperatures 1000-1200°C leads to activation of atoms REE and formation ofDL. Practical value: the lead optimization of parameters Si, doped with REE can be serve as recommendations at creation of new semi-conductor devices with stable and reproduced parameters. Degree of embed and economic effectivity: the received results on increase of thermal stability and radiating stability of parameters of silicon introduction of Ho, La and Eu atoms can be used as recommendations at manufacturing various semi-conductor devices; Field of application: semiconductor material researching, production of semiconductor devices, microelectronics and optoelectronics.