Влияние сильного сверхвысокочастотного поля на рекомбинационнўе токи p-n-перехода

Аннотация

The dissertation work of M.G.Dadamirzaev on a theme. "Influence of a high microwaeve field on recombination currents on p-n-junction ". The work is devoted to investigate of mechanisms of occurrence of currents and of electromotive forces (EMF) in p-n- junction, at the influence of microwaeve fields. It is shown that the constant currents of electromotive force arising in p-n- junction placed on high microwaeve field are caused by recombination currents in the field of a volumetric charge of transition and on a surface of a sample. It is established, that the distortion of electromagnetic field inside the the sample results in increasing of recombination of currents in volume and on a surface of a sample. As a result of fluctuations of surface of potential under the influanced external microwaeve field increase constant currents and EMF, generated by the diode. It is shown, that in a regime of short circuit effective height of a potential barrier decreases in a mode of a single course are generated anomalous great EMF. 14 Vortical currents in samples by p-n- junction field, placed in a non-uniform microwaeve field is investigated in this work. It is shown, that the vortical currents reduce currents and EMF, generated of the diode. The new mechanism of occurrence is of anomalous of the large photovoltage in thin semi-conductor films is effered in this investigation. It is arosen by jet photoEMF in view of a microrelief of a free surface of the sample. The method of definition energy and concentration of surfase and volumetric condition is advenced by the using of charg coupled devices.