ИССЛЕДОВАНИЕ ФОТОЭЛЕКТРИЧЕСКИХ И МАГНИТНЫХ СВОЙСТВ КРЕМНИЯ С НАНОКЛАСТЕРАМИ АТОМОВ МАРГАНЦА

Аннотация

Subject of research: monocrystal samples of silicon of mark КДБ - 2, 5, 10, 100 which have been doped impurity atoms of manganese. Purpose of work: working out of technology of reception of silicon with nanoclusters impurity atoms of manganese with steer able charging condition status and the magnetic moment, and also research of their properties and definition functional possibility for usage of such materials in modem electronics. Method of research: electric, photo-electric methods, device of an electron spin resonance (ESR), atomic force and infra-red microscopes were used. The results obtained and their novelty: for the first time effects arc found out: it is anomalous high-tcmpcraturc negative magnetoresistance, giant impurity photoconductivity in the field of A.=1,54-8 microns, it is anomalous infra-red quenching of photoconduction. Laws of change obtained effects from size electric arc established and magnetic field, temperatures intensity of lighting. Practical value: the technology of reception of silicon with nanoclusters atom of manganese steer able charging condition status and concentration is developed. Possibility of creation on the basis of silicon with magnetic nanoclustcrs new type sensitive magnetic sensors, on the basis of NMR and IR photodetectors working is shown at presence enough high levels of background light. Degree of embed and economic effectivity: the results received in work can be introduced on Open Society "PHOTON" and on chair «Electronics and microelectronics» TSTU in educational process. Field of application: the microelectronic industry, in area use renewed energy sources.