ОСОБЕННОСТИ ВЛИЯНИЯ ГРАНИЦЫ РАЗДЕЛА И ПРОТЯЖЕННОСТИ ОБЛАСТИ ОБЪЕМНОГО ЗАРЯДА НА ЭЛЕКТРОФИЗИЧЕСКИЕ ХАРАКТЕРИСТИКИ ДЕТЕКТОРНЫХ СТРУКТУР

Аннотация

Subject of research: manufacturing of the large size Si(Li) p-i-n and aSi-Si(Li) detector structures. Purpose of work: investigation the features of formation of the large size high efficiency detector structures with optimal clcctrophysical and radio-metric properties as well as study of new physical mechanisms of influencing for formation their amplitude of energetic spectra. Methods of research: method of investigation of current-voltage and volt-capacity characteristic of detector structures; method of investigation of features of photovoltagc in nonuniform area of the sensitive regions of Si(Li) p-i-n structure, as well as investigation of the structure research of aSi-Si(Li) interface. The results obtained and their novelty: physic-technological methods of formation structures with of optimum properties of clectrophysical characteristics and radiometric properties of semiconductor detectors on the base of Si(Li) p-i-n structures and aSi-Si(Li) hcterostucturcs with large area arc developed; on the base of investigation of relaxation photoconductivity processes in Si(Li) p-i-n structure have been carried out that on the some regions of these area was pronounced a “well” on time dependence of photovoltage’s impulse after corresponding photoexcitation is observed; on the basis of analytical calculations of the trajectory of carriers transport in i - area of Si(Li) p-i-n structure where take into account the influence on this process of inhomogeneous potential field it has shown that under such conditions electrons and holes generated as a result of ionization of atoms by nuclear radiation moved forward longer trajectory in electric field direction in sensitive part of semiconductor detector. Practical value: researched detectors structures Si(Li) p-i-n and aSi-Si(Li) have possess for understanding of physical processes in various large size semiconductor devices as well as practical value for improving of their characteristics. Degree of embed and economic affectivity: results of investigations had application for optimization of properties of Si(Li) semiconductor detectors at fulfilling contract work with OJSC «UzCRHRM», OJSC «Uzbckchimmash» with total financing around 20 million sum. Field of application: investigated detector structures have prospects for developing of fundamental and applied problems of nuclear physics.