РецензированоEN2021

STRUCTURAL STUDIES OF FILMS CADMIUM TELLURIDE GROWN ON SILICON SUBSTRATES

SILICON SUBSTRATES · Sh.B. Utamuraova · N.A. Turgunov (Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan) · S.A. Muzafarova (Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan) · K.M. Fayzullaev (Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan)

American Journal Of Applied Science And Technology · 02 · 96-102 · 2021

Аннотация

Cadmium telluride films are grown on single-crystal silicon substrates by vacuum deposition in a quasi-closed volume. CdTe films were studied by atomic force and scanning electron microscopy. KEYWORDS Cadmium tellurium, silicon, films, composition, structure, temperature.

Доказательный фрагмент

«Cadmium telluride films are grown on single-crystal silicon substrates by vacuum deposition in a quasi-closed volume.»

Образец извлечения

Демо-превью

Cadmium telluride films are grown on single-crystal silicon substrates by vacuum deposition in a quasi-closed volume. Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

doi.org/10.37547/ajast/Volume02Issue09-04