Физические основы контактов металл-GaAs (GaP, InP), сформированных чистыми металлами и аморфными пленками TiBx

Аннотация

Object of research: is instrumental structures with Schottky barrier on basis of GaAs (GaP, InP), as subject of research arc selected transition process of the characteristic of metal металл-А3В5, generated by fine metals and amorphous films TiBx under the influence of 60Co gamma-radiation, microwave radiation and rapid thermal treatment. Purpose of work: clarifying the mechanism of reproducibility increasing and stabilization of instrumental structures on basis of GaAs, GaP and InP with Schottky barrier generated by amorphous films TiBx. Methods of research: Auger-electron spectroscopy in aggregate with ion etching (Ar+, En=l kiloelectronvolt), X-ray structural analysis, atomic-force microscopy. 6<)Co gamma-quantum irradiation conducted on installation MPX-/-25M, and microwave treatment with magnetron radiation on a frequency f=2,45 GHz with 1,5 Vt/sm2 output power density. Voltage-current characteristic investigated on standardized automated curve tracers. The results obtained and their novelty: conducted the analysis of the mechanism of mechanical stress on films and contact structures against the A3B5, which allows clarify the regularity of processing factors' impact on mechanical stress of contact structures. Developed the physic-technological basis of contacts generating against A3B5 including rapid thermal treatment, which allows to control contact characteristic by the impact on phase formation process and interface characteristic. Developed the new technological approach to preparation of autoepitaxial films of InP n type, growing by the method of liquid-phase epitaxy on n -InP porous bottom layer and ohmic and barrier contacts to them using the amorphous interstitial phase of TiBx. Practical value: findings on external action tolerance of the semiconductor instrumental structures with Schottky barrier on basis of A3B5 can be used in creating the semiconductor instrumental structures with Schottky barrier on basis of А3В5 Degree of embed and economic affectivity: findings of research arc used in research scientific works and engineering developments in “ORION” research institution at developing and preparing microwave diode with Schottky barrier. Field of application: solid-state microwave electronics, semiconductor instrument making, the technology of microwave semiconductor instruments.