Роль прикладной программы Maple в решении сложных математических задач

Аннотация

In broader terms, the statement discusses the significance of studying p-n junction structures, which play a crucial role in the functionality of semiconductor electronic devices. The focus of the study is on understanding and analyzing the electrophysical properties of these structures. The paper specifically delves into comparing two types of semiconductor p-n junction structures: traditional planar ones and newer radial structures. The findings suggest that the electrophysical properties of radial p-n junction structures surpass those of traditional planar ones. This conclusion is particularly relevant for various electronic devices such as solar cells, LEDs, lasers, sensors, and other electronic-optical semiconductor devices. In essence, the study suggests that radial p-n junction structures exhibit higher efficiency in the mentioned applications compared to their traditional planar counterparts. Keywords: radial p-n junction, Si, GaAs, modeling, calibration, cryogenic temperature, ideality factor, core-shell structure, NW (nanowire), NC (nanocone), RJ (radial junction), PJ (planar junction). The p-n or p-i-n junctions, which constitute the primary functional components of many semiconductor electronic devices, are typically built using traditional planar structures. However, over the past two decades, both theoretical and practical research has been conducted on novel types of radial p-n or p-i-n structures [1-4]. Consequently, this study aims to analyze and 7