РецензированоEN2021

G.T. Badalova

S.A. Muzafarova · K.M. Fayzullaev (Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan) · M.R. Kayumova (Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan) · G.T. Badalova (Tashkent Chemical Technology Institute, Uzbekistan)

American Journal Of Applied Science And Technology · 02 · 163–185 · 2021

Аннотация

This paper presents the properties of compounds of molybdenum silicide Mo - Si. The molybdenum layer was formed with a thickness of 1 ÷ 2 μm by magnetron sputtering onto the surface of a semiconductor from a silicon single crystal grown by the Czochralski method in an atmosphere of pure inert argon gas. The properties of molybdenum silicide formed in the volume of silicon have been studied. KEYWORDS Magnetron sputtering, reactive gases, metal, semiconductor, silicide.

Доказательный фрагмент

«This paper presents the properties of compounds of molybdenum silicide Mo - Si.»

Образец извлечения

Демо-превью

This paper presents the properties of compounds of molybdenum silicide Mo - Si. Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

doi.org/10.37547/ajast/Volume02Issue11-09