МАЙДОНИЙ ТРАНЗИСТОР АСОСИДАГИ КЎП ФУНКЦИЯЛИ ДАТЧИКНИНГ КАНАЛИ КАМБАҒАЛЛАШГАН РЕЖИМДАГИ СЕЗГИРЛИК ХУСУСИЯТЛАРИ

Аннотация

OF DISSERTATION OF THE DOCTOR OF PHILOSOPHY (PhD) ON PHYSICAL AND MATHEMATICAL SCIENCES ANDIJAN – 2018 51 The theme of dissertation of doctor of philosophy (PhD) on physical and mathematical sciences was registered at the Supreme Attestation Commission of the Cabinet of Ministers of the Republic of Uzbekistan under No. В2017.2.PhD/FM87. Dissertation has been prepared at Bukhara state university. The abstract of the dissertation is posted in three languages (uzbek, russian, english (resume)) on the website of scientific council (www.adu.uz) and on the «Ziyonet» Information and educational portal (www.ziyonet.uz). Scientific supervisor: Djurayev Davron Rakhmonovich doctor of Physical and Mathematical Sciences, professor Official opponents: Onarkulov Karimberdi Egamberdievich doctor of Physical and Mathematical Sciences, professor Shariboev Nosirjon Yusupjonovich doctor of Physical and Mathematical Sciences Leading organization: Karakalpak State University Defense will take place «____» _____________2018 at _____ at the meeting of Scientific Council number PhD.28.02.2018. FM.60.01 at Andijan state university. Address: 170100, Uzbekistan, Andijan, 129 Universitet street. Phone/fax: 0(374) 223-88-30, e-mail: agsu_info@edu.uz. Dissertation is possible to review in Information-resource centre at Andijan state university (is registered under No.____) Address: 170100, Uzbekistan, Andijan, 129 Universitet street. Phone/fax: 0(374) 223-88-30, e-mail: agsu_info@edu.uz. Abstract of dissertation sent out on «____» _______________2018 S.Z.Zaynabidinov Chairman of Scientific council on award of scientific degree, DSc in physics and mathematics, academician A.O. Kurbanov Scientific secretary of Scientific council on award of scientific degree, PhD in physics and mathematics I.N. Karimov Chairman of Scientific seminar at Scientific council on award of scientific degree, DSc in physics and mathematics 52 INTRODUCTION (abstract of PhD dissertation) The aim of research work is to determine the sensitivity to external influences (pressure, light and thermal radiation) of a field-effect transistor in the channel cut-off mode. The objects of research are field-effect transistors with a controlling pn- junction in channel depletion mode. Scientific novelty of dissertation work: a mechanism for the temperature sensitivity of the cross-section voltage is established, according to which the contact potential difference of the p-n junction decreases with increasing temperature, and the carrier's own concentration increases, leading to an increase in the thickness of the channel's conductive part and the cut-off voltage; It is shown that the temperature coefficient of the cut-off voltage obeys the same law for all field-effect transistors of the same type-nominal (channel width and length), regardless of the technological parameters of the transistor structure in a wide temperature range from -150 ° C to +150 °; the mechanism of photosensitivity of the field-effect transistor in the cut-off mode is revealed. Accordingly, a voltage drop (cut-off voltage) is created at the source-gate transition from the blocking voltage of the drain-gate at the source-gate transition and as the intensity of the channel illumination increases, the voltage drop at the source (source-gate resistance) decreases, and the magnitude of the photocurrent arising on the drain increases; the mechanism of the strain-sensitivity of the field-effect transistor is that, at all-round pressure, the thickness of the conducting part of the channel relative to the initial thickness of the space-charge region of the gate's p-n-junction decreases, leading to a decrease in the voltage value for the channel pickup; it has been shown experimentally that a sensor with a field effect transistor with the proposed characteristic parameters of the channel in the mode of small automatic bias can be used in the receiving module of optical signals. Implementation of the research results. As a result of the study of sensitivity to external influences in the mode of locking the field effect transistor with p-n-junction: a multifunctional sensor based on a field-effect transistor received a patent of the Agency of Intellectual Property of the Republic of Uzbekistan «Multifunctional sensor based on a field-effect transistor» (No. IAP 05120 of 12.10.2015). The developed multifunctional sensor on the field-effect transistor allowed to record temperature, light and deformation in electronic measuring systems; methods of measuring temperature using electronic circuits based on a field effect transistor when using the cut-off voltage as a measuring parameter by the Bukhara State University in the implementation of the project Ф2-ФА-0-83921 / Ф2-ФА-Ф0383 "Strong correlation interactions in superconductors and magnetic materials and their critical parameters »2014-2016. made it possible to measure the target temperature in the objects under investigation (reference to the Agency for Science and Te