ҚУЧҚАРОВ БЕҲЗОД ХОШИМЖОНОВИЧ ЯРИМЎТКАЗГИЧ-ДИЭЛЕКТРИК ЧЕГАРА БЎЛИМИ ФАЗАЛАРИНИНГ ДИНАМИК ХОССАЛАРИ

Аннотация

OF DISSERTATION OF THE DOCTOR OF PHILOSOPHY (PhD) ON PHYSICAL AND MATHEMATICAL SCIENCES Andijan – 2018 39 The theme of dissertation of doctor of philosophy (PhD) on physical and mathematical sciences was registered at the Supreme Attestation Commission at the Cabinet of Ministers of the Republic of Uzbekistan under No. В2017.1. PhD/FМ42. Dissertation has been prepared at Namangan state university. The abstract of the dissertation is posted in three languages (uzbek, russian, english (resume)) on the website (fti-kengash.uz ) and on the «Ziyonet» Information and educational portal (www.ziyonet.uz). Scientific supervisor: Mamatkarimov Odiljon Okhundadayevich Doctor of Physical and Mathematical Sciences Official opponents: Karimov Abdulaziz Vaxitovich Doctor of Physical and Mathematical Sciences, professor Karimov Ibrohim Nabiyevich Doctor of Physical and Mathematical Sciences Leading organization Fergana state university Defense will take place «____» _____________2018 at _____ at the meeting of Scientific Council number PhD.28.02.2018.FM.60.01 at Andijan state university. (Address: 170100, Uzbekistan, Andijan, 129 Universitet Street. Phone/fax: 0(374) 223-88-30, e-mail: agsu_info@edu.uz.) Dissertation is possible to review in Information-resource centre at Andijan state university (is registered under №____) (Address: 170100, Uzbekistan, Andijan, 129 Universitet street. Phone/fax: 0(374) 223-88-30, e-mail: agsu_info@edu.uz.) Abstract of dissertation sent out on «____» _______________2018. S.Z. Zaynabidinov Chairman of scientific council on award of scientific degree, Doctor of Physical and Mathematical Sciences, professor, academician A.O.Kurbanov Scientific secretary of scientific council on award of scientific degree, PhD in physics and mathematics M.Z.Nosirov Vice chairman of scientific Seminar under Scientific Council on award of scientific degree, PhD in physics and mathematics, docent 40 INTRODUCTION (abstract of PhD thesis). The aim of the research work is to determine the significant factors in the dynamics of charge carriers on the base of the study of the results of all the above- mentioned effects on the physical processes occurring at the interface in the Metal- Dielectric-Semiconductor (MIS) structures formed by coating the surface of n-type silicon in lead-boron-silicate glass. The objects of research are structures of metal (Al)-lead-boron-silicate glass (of the type PbO-SiO -B O -Al O -Ta O ) and crystalline silicon consisting of n- 2 2 3 2 3 2 5 type with the crystal direction as well as structures Al-Si-SiO , were chosen 2 as the objects of investigation. Scientific novelty of dissertation work consists in the following: At temperatures the melting of lead-borosilicate glass is higher than 6700С, the density of electronic states localized at the phase interface increases. The main reason for reducing the rate of charge formation in the inversion layer, in structures subjected to electron injection, is the release of electrons captured by lead ions and their interaction with the charge of the inversion layer. And the effect of all-round compression affects the glass layers adjacent to the interface with the semiconductor, leading to a decrease in the density of the surface states, and, consequently, to a decrease in the rate of formation of the charge of the inversion layer. For MIS structures, a method is proposed for determining the velocity of volumetric and surface generation by means of a theoretical calculation of the dependence of the width of the space-charge region (SCR) on time on the basis of experimental measurement of the relaxation of the capacitance. Ultrasonic treatment of Al-n-Si-glass-Al structures with a frequency of 2.5 mHz with a power of 0.5 W for 40 minutes leads to a decrease in the rate of charge formation of the inversion layer and does not affect the energy spectrum of bulk electronic states in the semiconductor. Comprehensive microwave processing of the MIS structures leads to a change in the density of the surface states and, consequently, to a decrease in the surface generation currents. Reduction of surface generation currents promotes an increase in photosensitivity. An increase of the positive charge at the interphase interface and the subsequent thermal treatment of the proton-irradiated structures lead to a decrease in the positive charge localized near the interphase interface. The physical mechanisms that lead to the formation of surface states under the influence of irradiation at the interphase boundaries of Si-SiO and Si- lead-borosilicate glass of 2 this composition are of a similar nature. A physical model is proposed that explains the decrease in the positive charge of the density of the surface state under the influence of thermal cycling. Corresponding to it, in the heating and cooling cycles, migration of the inclusion centers, which do not have interstitial electrical activity, is occurs towards the Si- SiO interface. After this, they inte