SixSb2Te materials with stable phase for phase change random access memory applications

Аннотация

Phase-change material is solid characterized by an unconventional combination of properties. On the one hand, it is used extensively in rewritable optical storage media due to the significantly different optical properties between the amorphous and crystalline phases and the ability of being rapidly switched between two phases.1 On the other hand, it is also considered as one of the most promising candidates for next-generation non-volatile solid-state memory due to its outstanding performances, such as nonvolatility, high scalability, high speed, low power, low cost, and compatibility with complementary metal-oxide semiconductor (CMOS) process.