Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Аннотация

Impact of set/reset pulse duration and amplitude on the endurance failure modes of TiN\Ta2O5\Ta cells is investigated and is related to interaction between Oxygen and TiN bottom electrode during reset. Hourglass electrical switching simulation of conductive filament temperature during reset transient and ab-initio calculation of reaction energy further support this degradation mechanism.Based on this understanding, endurance improvement is achieved by using shorter reset pulse and/or using inert Ru bottom electrode.