Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications

Аннотация

The feasibility of Schottky diode as selector has been investigated for possible application in bipolartype resistive random access memory (RRAM) devices. In order to evaluate the feasibility of Schottky diode as selector for bipolar-type RRAM applications, a full device simulation has been performed utilizing a Schottky diode þ bipolar-type RRAM structure (1SD-1R). On the other hand,we confirmed its successful operation under experimental results with Ni/TiOx/W Schottky diode þ Pt/HfO2/Cu bipolar-type RRAM structure. Furthermore, by applying a lower Set voltage in the 1SD-1R structure device, the Reset current and Reset voltage are found to decrease due to the reduced compliance current. Such dependence provides the possibility of lower power consumption in the 1SD-1R structure device