Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

Аннотация

Resistive random access memory based on transition metal oxide materials has attracted much recent attention for the development of next-generation non-volatile memory. The Hf:NiOx devices showed driving mode transformation by the Hf content in the system. Unipolar resistive switching was observed at 2% of Hf concentration while a bipolar resistive switching was observed at 10%. Un-stable switching was shown at 30%, and non-stable breakdown was followed by 100%. These variations of I–V characteristics can enhance understanding of resistive switching phenomenon under the material incorporated system.