Analyzing the ZnO and CH 3 NH 3 PbI 3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Аннотация

Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-basedheterojunction solar cells, at a lower cost. Therefore, the aim of this paper isto analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-typesilicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO canbe synthesized using the cheap Sol-Gel method and can form n-type semi- conductor.