Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

Аннотация

Temperature and magnetic field dependencies of sheet resistance Ra{T, В ) in polycrystalline CVD graphene,investigated in the range of 2 < T < 300К and magnetic fields 0 < В < 8T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for Rn{T, В ) curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiCh).