Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation

Аннотация

In this paper formation and annealing o f boron-related defects in p-type silicon grown by the floating zone technique and subjected to electron and proton irradiation at room temperature are discussed. The defect model suggested earlier has provided fresh insight into the nature o f two dominant complexes containing boron in irradiated p-Si, among them boron-divacancy complexes and interstitial boron-substitutional boron pairs.