Мechanism of migration of nickel impurity atom clusters in a silicon crystalline lattice

Аннотация

A new physical phenomenon, the migration of clusters of impurity nickel atoms in silicon, has been discovered. It was shown that clusters move in the silicon lattice with a high diffusion coefficient (Dm ~ 10“9 cirr/s at Г=800 °C). The composition of the clusters is determined, its structure and diffusion mechanism are proposed.