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Рhotosensitive of the n(gaas) - p{gaas)o,69(ge2>o,i7(znse)o,i4 heterostructures

Boboev A. · Rakhraanov S.

Научные статьи · 2017

Аннотация

The results of experimental studies of wide-band solid solutions (SS)(GaAs)o,69(Ge2)o,i7 (ZnSe)o,i4, grown by the method of the liquid phase epitaxy from the limited volume of solution-melt are presented in this work. The epitaxial layers were grown on the single-crystal substrates GaAsn - conductivity type, having the crystallographic orientation (100). The growth of layers was carried out with forced cooling from the tin solution-melt under the atmosphere of purified hydrogen palladium. The speed of forced cooling in the optimally mode amounted 1+1,5 deg/min.

Доказательный фрагмент

«The results of experimental studies of wide-band solid solutions (SS)(GaAs)o,69(Ge2)o,i7 (ZnSe)o,i4, grown by the method of the liquid phase epitaxy from the limited volume of solution-melt are presented in this work.»

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Демо-превью

The results of experimental studies of wide-band solid solutions (SS)(GaAs)o,69(Ge2)o,i7 (ZnSe)o,i4, grown by the method of the liquid phase epitaxy from the limited volume of solution-melt are presented in this work. Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

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