Study of erbium impurity atom state in a Si(H) films

Аннотация

In this study, we investigated the state of erbium impurity atoms in a-SiO*(H):Er by means of the emission Mossbauer spectroscopy on isotope 169Er(169Tm). The M6ssbauer spectra are the superposition of a quadrupole doublet (component I) and a single line (component II). Based on the values of quadrupole splitting, a conclusion should be made that component I corresponds to erbium centers with the reduced symmetry of local environment, while component II corresponds to erbium centers in an almost regular cubic environment.