К содержанию
CiteXCiteX — научный поиск с источниками
РецензированоEN2023

ANALYSIS OF STUDYING THE STRUCTURE OF EPITAXIAL IRON FILMS ON GALLIUM ARSENIDE Fe/GaAs

Odinakhan Rayimjonova (Phd, Docent, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan) · Sherali Toshpulatov (Assistant, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan) · Gulrukhsor Ergasheva (Student, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan) · Dilshod Tulanov (Teacher, Academic Lyceum Under Namangan Institute Of Engineering And Construction, Namangan, Uzbekistan)

Международный журнал передовых научных исследований · 23-28 · 2023

Аннотация

The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of the iron layer. The value of the cubic anisotropy constant decreases. In this case, the value of the uniaxial anisotropy constant, on the contrary, increases. The dilution of the semiconductor matrix with iron atoms is also noted, and the formation of Fe-Ga or Fe-As compounds is assumed. An analysis of the surface sensitivity of the spectra of As and Ga shows that As is more easily mixed with Fe than with Ga.

Доказательный фрагмент

«The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of the iron layer.»

Образец извлечения

Демо-превью

The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of the iron layer. Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

DOI не указан
Цитирований
0
Тип
Журнал
Страна
Узбекистан
Ключевые слова
Thin films, electron beam epitaxial, uniaxial and cubic anisotropy, ferromagnetic resonance
Спросить CiteX об этой работе

Смежные источники