Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

Аннотация

The optimal modes of ion implantation and annealing were determined for the formation of thin single-crystal films of metal silicides. The thickness of the silicide films is shown to increase with increasing energy of implanted ions and at a fixed energy to be proportional to the square root of the ion dose.