Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

Аннотация

Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose of D > 1016 cm–2 is presented in this paper. On the basis of a twofluid model of the electron gas, the observed effect of a decrease in the Si(111) plasmon energy is explained by the strong damping of valence electron oscillations because of disordering of the Si(111) crystal structure up to full amorphization