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РецензированоEN2022

Interaction of vanadium atoms alloyed silicon particles with oxygen

Rasulov Sh. Z. · Yuldoshev Z. N. · Axmadov M. A.

Научные статьи · 2022

Аннотация

This article provides information on the effect of oxygen on particles in semiconductor materials doped with vanadium atoms, which are formed during the improvement of the electrophysical properties of silicon semiconductors. The research was conducted in 2021-2022 in the laboratory of the Semiconductor Physics and Microelectronics Scientific Research Institute at the National University of Uzbekistan.

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«This article provides information on the effect of oxygen on particles in semiconductor materials doped with vanadium atoms, which are formed during the improvement of the electrophysical properties of silicon semicon…»

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This article provides information on the effect of oxygen on particles in semiconductor materials doped with vanadium atoms, which are formed during the improvement of the electrophysical properties of silicon semicon… Полный текст публикации CiteX не хранит — доступ к первоисточнику открывается по DOI согласно лицензии издателя и выбранному плану.

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Узбекистан
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