Research Of The Boundary Of The Section Of A Photo Receiver Based On Mos pCdTe / CdO Structures

Аннотация

In this work, we investigated an intermediate layer in the structure of a photosensitive MOS structure nCdO / pCdTe . X-ray phase analysis shows that the intermediate layer between Mo and pCdTe is rather complex in composition. It contains dichalcogenides - three oxide MoO and a thin layer of a 3 composite material with the composition of ditelluride MoTe . According to X-ray diffraction 2 measurements, the total thickness of the intermediate layer is no more than ~ 200Ǻ. It was shown that in the nCdO / pCdTe structure the base material CdTe mainly consists of a homogeneous cubic modification layer. KEYWORDS Intermediate layer, photosensitivity , gas transport, interfaces , dichalcogenides , X-ray diffraction analysis, structure.