THE ELECTRON-SPECTROSCOPIC INVESTIGATIONS OF THE EPITAXIAL CoSi2 FILMS ON SILICON

Аннотация

This work is devoted to the study of the electronic structure, optical properties and electric resistance of the epitaxial layers CoSi2/Si produced in the ultrahigh vacuum conditions (p=10-7 Pa) by the molecular beam epitaxy method on Si surface (111). It has been shown that the forbidden zone width of solid CoSi2 films is 0.5-0.6 eV and there are two maximal of the electron state density in the valence zone. These films have the low specific resistance (p=20-25 µΩ.cm).